Semi-insulating group iii-v based compositions doped using...

Details Semi-insulating group iii-v based compositions doped using... Semi-insulating group iii-v based compositions doped using...

H - Electricity

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H01L 21/205 (2006.01) C30B 25/02 (2006.01) H01L 21/223 (2006.01) H01L 29/207 (2006.01)

Patent

CA 1291926

- 14- Abstract of the Disclosure Semi-insulating epitaxial layers of Group III-V based semiconductor compounds are produced by a MOCVD process through the use of organic titanium-based compounds. Resistivities greater than 1 x 107 ohm/cm have been achieved. (FIG. 1).

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