Semi-insulating silicon carbide without vanadium domination

Details Semi-insulating silicon carbide without vanadium domination Semi-insulating silicon carbide without vanadium domination

C - Chemistry, Metallurgy

30

B

C30B 29/36 (2006.01) C30B 23/00 (2006.01) C30B 33/00 (2006.01)

Patent

CA 2376564

A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 .OMEGA.-cm at room temperature and a concentration of deep level trapping elements that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.

Cette invention concerne un monocristal massif de carbure de silicium qui possède une résistivité d'au moins 5000 OMEGA -cm à la température ambiante et une concentration d'éléments de piégeage profond inférieure aux doses qui influent sur la résistivité du cristal, de préférence au-dessous des niveaux détectables. L'invention concerne également un procédé d'obtention du cristal ainsi que certains dispositifs y relatifs qui exploitent les possibilités des hyperfréquences offertes par des substrats réalisés sur le principe de cette invention.

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