Semiconducting metal silicide radiation detectors

G - Physics – 01 – J

Patent

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G01J 1/44 (2006.01) G02B 6/42 (2006.01) H01L 27/146 (2006.01) H01L 31/032 (2006.01) H01L 31/09 (2006.01) H01L 31/103 (2006.01) H01L 31/109 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1326966

SEMICONDUCTIVE METAL SILICIDE RADIATION DETECTORS AND SOURCE ABSTRACT Semiconducting metal silicide electromagnetic radiation detectors have a thin film of semiconducting metal silicide, such as rhenium disilicide, grown or deposited on a silicon wafer. The detectors are intrinsic semiconductor detectors and can be formed either as discrete devices, or monolithically on a silicon chip to provide an integrated detector or detector array. The semiconducting rhenium disilicide detectors are efficient at wavelengths which mate with the transmission capabilities of certain optical fibers, thereby enhancing the combination of infrared detectors and optical fiber transmission previously known. The range of electromagnetic radiation sensed by these rhenium disilicide detectors include the infrared range of wavelengths up to 14 microns.

613820

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