Semiconducting nanowire arrays for photovoltaic applications...

H - Electricity – 01 – L

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H01L 31/0352 (2006.01) H01L 31/18 (2006.01)

Patent

CA 2733101

This invention relates to the fabrication of nanowires for electrical and electronic applications. A method of grow-ing silicon nanowires using an alumina template is disclosed whereby the aluminum forming the alumina is also used as the cata-lyst for growing the silicon nanowires in a VLS (CVD) process and as the semiconductor dopant. In addition, various techniques for masking off parts of the aluminum and alumina in order to maintain electrical isolation between device layers is disclosed.

La présente invention a trait à la fabrication de nanofils pour des applications électriques et électroniques. Le procédé de croissance de nanofils de silicium à l'aide d'une matrice d'alumine selon la présente invention permet d'utiliser l'aluminium formant l'alumine également en tant que catalyseur pour la croissance des nanofils de silicium dans un processus VLS (dépôt chimique en phase vapeur) et en tant que dopant semi-conducteur. De plus, la présente invention a également trait à diverses techniques permettant de masquer des parties de l'aluminium et de l'alumine afin de maintenir l'isolation électrique entre les couches du dispositif.

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