Semiconducting surface-emitting laser

Details Semiconducting surface-emitting laser Semiconducting surface-emitting laser

H - Electricity

01

S

H01S 5/183 (2006.01) G02B 26/00 (2006.01) H01S 5/22 (2006.01)

Patent

CA 2194003

o increase its performance and diminish heat build-up, the laser includes, between a buried active layer (AL) and a mirror (MH) a current blocking layer (B) provided with an opening centred on the active layer (AL) and of a smaller size than the latter. Applicable, in particular, to optical telecommunications systems.

Afin d'augmenter son rendement et de diminuer l'échauffement, le laser comporte entre une couche active (CA) enterrée et un miroir (MH) une couche de blocage de courant (B) munie d'une ouverture centrée sur la couche active (CA) et de dimensions inférieures à celle-ci. Application notamment aux systèmes de télécommunication optiques.

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