H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 5/183 (2006.01)
Patent
CA 2194004
EMICONDUCTING SURFACE-EMITTING LASER MANUFACTURING PROCESS. To ensure proper electrical confinement and good flatness of the mirrors that delimit the laser's optical resonator, the process involves generating an electrical confinement layer by growing a layer of aluminium alloy (4) on the active layer (AL), everywhere except in an opening zone (8) above which the mirror will be formed. After repeated epitaxy, a lateral oxidation of the alloy layer is carried out (4). Applicable to the manufacture of semiconducting lasers on substrates III-V, such as InP and GaAs.
PROCEDE DE FABRICATION D'UN LASER SEMI-CONDUCTEUR A EMISSION PAR LA SURFACE. Pour assurer un bon confinement électrique et une bonne planéité des miroirs délimitant la cavité résonnante du laser, le procédé consiste à réaliser une couche de confinement électrique en effectuant une croissance d'une couche d'un alliage d'aluminium (4) localisée sur la couche active (CA), à l'exception d'une zone d'ouverture (8) au- dessus de laquelle le miroir sera formé. Après reprises d'épitaxie, on effectue une oxydation latérale de la couche d'alliage (4). Application pour la fabrication de lasers semi- conducteurs sur substrats III-V, tels que InP et GaAs.
Brillouet Francois
Goldstein Leon
Jacquet Joel
Plais Antonina
Salet Paul
Alcatel
Robic
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