Semiconductive barium titanate

Details Semiconductive barium titanate Semiconductive barium titanate

C - Chemistry, Metallurgy

30

B

148/3.9

C30B 29/32 (2006.01) C04B 35/468 (2006.01) H01C 7/02 (2006.01)

Patent

CA 1189770

ABSTRACT OF THE DISCLOSURE Semiconductive barium titanate having a positive tempera- ture coefficient of resistance comprises a barium titanate semiconductor including barium titanate and a small quantity of a doping element, and at least one additive selected from among silicon nitride, titanium nitride, zirconium nitride and silicon carbide. The semiconductive barium titanate of this invention has a sharp rise in the variation of specific resistivity with temperature change and a large specific resistivity ratio in the PTC temperature region, and can be produced with high reproducibility, since a widely differing quantity of the doping element can be effectively added to barium titanate.

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