Semiconductive polycrystalline diamond

C - Chemistry – Metallurgy – 30 – B

Patent

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Details

C30B 29/04 (2006.01) B23B 27/14 (2006.01) C04B 35/52 (2006.01) C30B 31/02 (2006.01) E21B 10/46 (2006.01) C23C 24/08 (2006.01)

Patent

CA 2419709

An ultra-hard semiconductive polycrystalline diamond (PCD) material formed with semiconductive diamond particles doped with Li, Be or Al and/or insulative diamond particles having semiconductive surfaces, tools incorporating the same, and methods for forming the same, are provided. The ultra-hard PCD material may be formed using a layer of insulative diamond grit feedstock that includes additives therein, then sintering to convert a plurality of the diamond crystals to include a semiconductive surface. In another embodiment, the ultra-hard PCD material is formed by sintering semiconductive diamond grit feedstock consisting of diamond crystals doped with Li, Al or Be. The ultra-hard semiconductive PCD cutting layer exhibits increased cuttability, especially in EDM and EDG cutting operations.

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