C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 29/04 (2006.01) B23B 27/14 (2006.01) C04B 35/52 (2006.01) C30B 31/02 (2006.01) E21B 10/46 (2006.01) C23C 24/08 (2006.01)
Patent
CA 2419709
An ultra-hard semiconductive polycrystalline diamond (PCD) material formed with semiconductive diamond particles doped with Li, Be or Al and/or insulative diamond particles having semiconductive surfaces, tools incorporating the same, and methods for forming the same, are provided. The ultra-hard PCD material may be formed using a layer of insulative diamond grit feedstock that includes additives therein, then sintering to convert a plurality of the diamond crystals to include a semiconductive surface. In another embodiment, the ultra-hard PCD material is formed by sintering semiconductive diamond grit feedstock consisting of diamond crystals doped with Li, Al or Be. The ultra-hard semiconductive PCD cutting layer exhibits increased cuttability, especially in EDM and EDG cutting operations.
Oyen Wiggs Green & Mutala Llp
Smith International Inc.
LandOfFree
Semiconductive polycrystalline diamond does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductive polycrystalline diamond, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductive polycrystalline diamond will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1403819