Semiconductor absolute pressure transducer assembly and method

Details Semiconductor absolute pressure transducer assembly and method Semiconductor absolute pressure transducer assembly and method

G - Physics

01

L

356/200

G01L 9/00 (2006.01)

Patent

CA 1115857

SEMICONDUCTOR ABSOLUTE PRESSURE TRANSDUCER ASSEMBLY AND METHOD ABSTRACT OF THE DISCLOSURE A semiconductor pressure transducer assembly comprises a silicon diaphragm assembly and a glass covering member. The silicon diaphragm assembly has a circular diaphragm portion of thin silicon that is formed using etching, and a thick supporting portion therearound. Piezoresistive elements of a piezoresistive bridge circuit and conducting paths for electrical connection thereof are formed on the silicon diaphragm assembly. On a surface of the silicon diaphragm assembly, a passivating layer of silicon dioxide is formed with uniform thickness, and further on a surface of the passivating layer there is formed a layer of polysilicon on the supporting portion of the silicon diaphragm assembly. In the passivating layer, a contacting window is formed, through which the polysilicon layer is electrically connected to the silicon diaphragm assembly. The covering member (of borosilicate glass) having a circular well is mounted on and bonded to the silicon diaphragm assembly in contact with the polysilicon layer using an anodic bonding method. The processed silicon diaphragm assembly has a flat surface, on which the piezoresistive elements and the conducting paths are constructed using an ion implantation method, or by reforming a silicon dioxide layer thereon after removing another silicon dioxide layer used as a mask in a diffusion process.

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