H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/200, 349/56.
H01L 41/04 (2006.01) G01L 9/00 (2006.01) H01L 29/84 (2006.01)
Patent
CA 1131759
Abstract of the Disclosure The specification discloses a semiconductor absolute pressure transducer assembly having a silicon diaphragm assembly and a covering member. The silicon diaphragm assembly has a circular pressure sensitive diaphragm, on one surface of which is diffused piezoresistors and conducting paths. The covering member composed of boro- silicate glass has a circular well formed therein. A passivating layer of silicon dioxide is deposited on the surface of the silicon diaphragm assembly on which the piezoresistors and the conducting paths are diffused. Further, a conductive layer is formed on the passivating layer by, for example, evaporating silicon. The glass covering member is bonded on the silicon diaphragm assembly by Anordic Bonding, i.e., the silicon diaphragm assembly and the glass covering member are brought into contact and heated to a certain high temperature and a relative high voltage is applied across the conductive layer of the silicon diaphragm assembly and the glass covering member. In this way the transducer assembly can be fabricated by employing Anordic Bonding without the usual disadvantages usually attendant upon this technique.
324878
Hachino Hiroaki
Kawakami Kanji
Minorikawa Hitoshi
Misawa Yutaka
Nishihara Motohisa
Hitachi Ltd.
Kirby Eades Gale Baker
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