Semiconductor and manufacturing method for semiconductor

Details Semiconductor and manufacturing method for semiconductor Semiconductor and manufacturing method for semiconductor

H - Electricity

01

L

H01L 21/76 (2006.01) H01L 21/331 (2006.01) H01L 21/763 (2006.01) H01L 29/08 (2006.01) H01L 29/70 (2006.01)

Patent

CA 2374203

A semiconductor component comprising a highly doped layer on a substrate layer and delimited by at least one trench extending from the surface of the component through the highly doped layer, also comprises a sub-layer between the substrate layer and the highly doped layer, said sub-layer being doped with the same type of dopant as the buried collector, but to a lower concentration. A method for manufacturing such a component is also disclosed. The sub-layer causes a more even distribution of the potential lines in the substrate and in the subcollector layer, thereby avoiding areas of particularly dense potential lines. Since the breakdown voltage is lower in areas with dense potential lines, avoiding too dense potential lines means increasing the breakdown voltage of the component.

L'invention concerne un composant semi-conducteur comprenant une couche hautement dopée appliquée sur une couche substrat et délimité par au moins une tranchée traversant la couche hautement dopée à partir de la surface du composant. Le composant comprend également une sous-couche intercalée entre la couche substrat et la couche hautement dopée, cette sous-couche étant dopée avec le même type de dopant que celui du collecteur noyé, mais avec une plus faible concentration. L'invention concerne également un procédé de production d'un tel composant. La sous-couche provoque une distribution plus régulière des lignes de potentiel dans le substrat et dans la couche sous-collecteur, évitant ainsi les zones particulièrement denses en lignes de potentiel. La tension de rupture étant inférieure dans les zones à haute densité en lignes de potentiel, si l'on évite des lignes de potentiel trop denses, cela signifie l'augmentation de la tension de rupture du composant.

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