H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/266 (2006.01) H01L 21/033 (2006.01) H01L 21/22 (2006.01) H01L 21/32 (2006.01) H01L 21/8222 (2006.01) H01L 21/8249 (2006.01) H01L 29/73 (2006.01)
Patent
CA 2283396
A manufacturing method for semiconductor components is disclosed which will allow better precision in the definition of the doped areas of the components and the separation of differently doped areas. A selectively shaped area of, for example, polysilicon, defining the area or areas to be doped, is deposited on the component before the masks are applied. This makes the fitting of the masks less critical, as they only have to be fitted within the area of the polysilicon layer. In this way an accuracy of 0.1 µm or better can be achieved.
L'invention concerne un procédé de fabrication de composants semiconducteurs offrant une plus grande précision dans la définition des zones dopées des composants et dans la séparation de zones différemment dopées. Une zone de forme choisie, par exemple, en silicium polycristallin, définissant la ou les zones à doper, est déposée sur le composant avant l'application des masques. Cela rend l'ajustement des masques moins critique puisqu'il suffit de les ajuster dans la zone de la couche de silicium polycristallin. On obtient ainsi une précision d'au moins 0,1 µm.
Andersson Karin
Hamberg Ivar
Ogren Nils
Olofsson Dimitri
Sjodin Hakan
Marks & Clerk
Telefonaktiebolaget Lm Ericsson
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