Semiconductor assembly having reduced thermal spreading...

H - Electricity – 01 – L

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H01L 25/065 (2006.01) H01L 23/433 (2006.01) H01L 25/16 (2006.01)

Patent

CA 2713151

Semiconductor assemblies having reduced thermal spreading resistance and methods of making the same are described. In an example, a semiconductor device (101) includes a primary integrated circuit (IC) die (102) and at least one secondary IC die (104) mounted on the primary IC die (102). A heat extraction element (110) includes a base (109) mounted to the semiconductor device (101) such that each of the at least one secondary IC die (104) is between the primary IC die (102) and the heat extraction element (110). At least one dummy fill (106) is adjacent the at least one secondary IC die (104), and each thermally couples the primary IC die (102) to the heat extraction element (110).

L'invention porte sur des ensembles semi-conducteurs ayant une résistance de diffusion thermique réduite et sur des procédés de fabrication de ceux-ci. Dans un exemple, un dispositif semi-conducteur (101) comprend une puce de circuit intégré (IC) primaire (102) et au moins une puce de IC secondaire (104) montée sur la puce IC primaire (102). Un élément d'extraction de chaleur (110) comprend une base (109) monté sur le dispositif semi-conducteur (101) de telle sorte que chacune de l'au moins une puce IC secondaire (104) est entre la puce IC primaire (102) et l'élément d'extraction de chaleur (110). Au moins un remplissage fictif (106) est adjacent à l'au moins une puce IC secondaire (104), et chacun couple thermiquement la puce IC primaire (102) à l'élément d'extraction de chaleur (110).

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