Semiconductor ballistic electron velocity control structure

Details Semiconductor ballistic electron velocity control structure Semiconductor ballistic electron velocity control structure

H - Electricity

01

L

356/178

H01L 29/06 (2006.01) H01L 29/76 (2006.01)

Patent

CA 1244149

SEMICONDUCTOR BALLISTIC ELECTRON VELOCITY CONTROL STRUCTURE Abstract of the Disclosure A semiconductor device where an emitter material composition and doping profile produces an electron gas in a base adjacent a hand offset heterojunction interface, the electrons in the electron gas in the base are confined under bias by a low barrier and the ballistic carriers have their kinetic energy controlled to prevent intervalley scattering by an electrostatic barrier that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.

503080

Affiliated with

Also associated with

Rating

Semiconductor ballistic electron velocity control structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor ballistic electron velocity control structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor ballistic electron velocity control structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1338774