Semiconductor cathode with avalanche breakdown pn junction

Details Semiconductor cathode with avalanche breakdown pn junction Semiconductor cathode with avalanche breakdown pn junction

H - Electricity

01

J

356/165, 316/17,

H01J 29/48 (2006.01) H01J 1/308 (2006.01) H01J 9/02 (2006.01) H01L 21/467 (2006.01)

Patent

CA 1173487

1 PHN 9532 ABSTRACT: The invention related to a semiconductor cathode and a camera tube and display tube, respectively, having such a cathode, based on avalanche breakdown in a p-n juntion extending parallel to the surface of the semicon- ductor body. The released electrons obtain extra energy by means of an accelerating electrode provided on the device. The resulting efficeiny increase makes the manu- facture of such cathodes in planar silicon technology sensible. Since the depletion zone of the p-n junction upon avalanche breakdown does not emanate at the surface, the released electrons show a sharp energy distribution. This makes such cathodes particularly suitable for camera tubes. In addition they find application, for example, in display tubes and flat displays.

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