Semiconductor cathode with increased stability

Details Semiconductor cathode with increased stability Semiconductor cathode with increased stability

H - Electricity

01

J

313/35.35

H01J 1/30 (2006.01) H01J 1/308 (2006.01) H01J 29/04 (2006.01) H01J 31/12 (2006.01)

Patent

CA 1249011

17 ABSTRACT Semiconductor cathode with increased stability. The stability of semiconductor cathodes is improved by reducing the effective emitting surface area. This is effected by producing emission patterns (5) by means of separate emission regions (4), whose overall sur- face area is much smaller than that of the actual emission pattern (5). Due to the higher emission current and adjustment current, adsorbed particles, which adversely affect the stability of the emission, are rapidly drained. (Fig. 1).

495369

Affiliated with

Also associated with

Rating

Semiconductor cathode with increased stability does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor cathode with increased stability, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor cathode with increased stability will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1263624