Semiconductor component

Details Semiconductor component Semiconductor component

H - Electricity

01

L

356/161, 356/37

H01L 21/30 (2006.01) H01L 29/167 (2006.01) H01L 29/74 (2006.01)

Patent

CA 1088214

ABSTRACT In such electrical components as, for example, high-blocking-resistance thyristors, high-frequency thyristors and rapid-action diodes, it is desirable to ensure that the concentration curve for recombination centres in the axial direction of the semiconductor body of the component follows a predetermined course. For this purpose, at the anode side surface of the body elements are provided having respectively a higher and a lower gettering action on the recombination centres. By adjusting the surface areas of the respective elements, a desired concentration drop in the central region of the body in the axial direction can be set up.

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