Semiconductor component

Details Semiconductor component Semiconductor component

H - Electricity

01

L

H01L 23/52 (2006.01) H01L 23/60 (2006.01)

Patent

CA 2393668

The present invention creates an operating method for a semiconductor component having a substrate (1; 5); having a conductive polysilicon strip (10; l0a-d) which is applied to the substrate (1; 5); having a first and a second electrical contact (11, 12; 11a-d, 12a-d) which are connected to the conductive polysilicon strip (10; 10a-d) such that this forms an electrical resistance in between them; with the semiconductor component being operated reversibly in a current/voltage range in which it has a first differential resistance (R diff1) up to a current limit value (I t) corresponding to an upper voltage limit value (V t) and, at current values greater than this, has a second differential resistance (R diff2), which is less than the first differential resistance (R diff1).

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