Semiconductor component and manufacturing method for...

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H01L 21/763 (2006.01) H01L 21/331 (2006.01) H01L 21/336 (2006.01) H01L 21/74 (2006.01) H01L 21/762 (2006.01) H01L 21/84 (2006.01) H01L 27/12 (2006.01) H01L 29/08 (2006.01) H01L 29/732 (2006.01) H01L 29/78 (2006.01)

Patent

CA 2310280

A semiconductor comprising a buried conducting layer (108), such as a buried collector, comprises a trench, the walls of which are covered with a layer (109') of a material in which dopant ions diffuse faster than in monocrystalline silicon. A contact area is doped in close proximity to the trench wall (109'). The dopants will diffuse through the layer (109') and form a low resistance connection to the buried layer (108). The layer (109') may comprise polysilicon or porous silicon, or a silicide. If the material used in the layer (109') is not in itself conducting, the size of the component may be significantly reduced.

Semi-conducteur comprenant une couche conductrice enterrée (108), telle qu'un collecteur enterré, et présentant une tranchée, dont les parois sont recouvertes d'une couche (109') constituée par un matériau dans lequel les ions dopants se diffusent plus rapidement que dans du silicium monocristallin. On dope une zone de contact à proximité étroite de la paroi (109') de la tranchée. Les dopants vont se diffuser à travers la couche (109') et créer une connexion à résistance basse avec la couche enterrée (108). Cette couche (109') peut être composée de polysilicium ou de silicium poreux ou d'un siliciure. Si le matériau utilisé dans la couche (109') n'est pas conducteur en soi, ceci permet de diminuer considérablement la dimension du composant.

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