Semiconductor component with protective passivating layer

Details Semiconductor component with protective passivating layer Semiconductor component with protective passivating layer

H - Electricity

01

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356/161, 356/37

H01L 29/38 (2006.01) H01L 21/314 (2006.01) H01L 23/29 (2006.01) H01L 23/31 (2006.01)

Patent

CA 1101127

ABSTRACT OF THE DISCLOSURE The current-voltage characteristic of a semiconductor component is kept stable by vapour-depositing a protective passivating layer of silicon to at least the peripheral surface of the semiconductor element. The passivating layer can be achieved at low cost and at low temperature. The layer may contain dopants, reactive gases, or metals. The presence of these materials in the layer influences the specific resistance and conductivity type of the layer.

282942

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