Semiconductor compound oxide gas sensor of perovskite structure

Details Semiconductor compound oxide gas sensor of perovskite structure Semiconductor compound oxide gas sensor of perovskite structure

G - Physics

01

N

117/111, 117/53,

G01N 27/30 (2006.01) G01N 27/12 (2006.01)

Patent

CA 1199064

- 1 - Abstract: A gas sensor includes a layer of a sensitive material formed with spaced electrodes on an electrically insulating substrate, the electrodes being electrically connected to the layer. The layer is formed of a porous film consisting of a uniform mixture of a p-type compound oxide semi- conductor with a perovskite type of crystal structure as the major ingredient and one or more of vanadium, niobium, tantalum and/or compounds thereof as minor ingredients. The minor ingredients are contained in the layer in an amount of 0.01 to 5% by weight, based on the weight of the p-type compound oxide semiconductor, and are incorporated into the layer by diffusing them into the layer. The gas sensor exhibits a small change with time and a reduced tailing effect attendant on variations in the gas combustion. As a result, it is possible to effect measurement, detection and control with a high degree of reliability.

433479

Affiliated with

Also associated with

Rating

Semiconductor compound oxide gas sensor of perovskite structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor compound oxide gas sensor of perovskite structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor compound oxide gas sensor of perovskite structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1227212