Semiconductor contact formed by serigraphy

Details Semiconductor contact formed by serigraphy Semiconductor contact formed by serigraphy

H - Electricity

01

L

356/12, 356/174,

H01L 35/10 (2006.01) H01L 21/28 (2006.01) H01L 21/283 (2006.01) H01L 31/0224 (2006.01)

Patent

CA 1123965

ABSTRACT The invention relates to the formation of a contact on the surface of a semiconductor body by a serigraphy treatment by depositing a semiconductor paste with an addition of a doping element to increase the concentration of impurities at the surface during a vitrification of the said paste. According to the inven- tion, the method uses a second deposit of a semiconductor paste in the place for soldering a connection which paste comprises no doping element.

317578

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