Semiconductor controlled luminescent device

Details Semiconductor controlled luminescent device Semiconductor controlled luminescent device

H - Electricity

01

S

345/50

H01S 3/10 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1073999

SEMICONDUCTOR CONTROLLED LUMINESCENT DEVICE ABSTRACT OF THE DISCLOSURE A p type semiconductor gate layer is buried in an N type semiconductor cathode layer to encircle a channel through which a forward current passed through a luminescent PN junction flows. A reverse voltage is applied to the gate layer to spread a depletion layer in the channel to control the forward current and therefore the emission of light. The gate layer may be disposed on that surface of the cathode layer remote from the luminescent PN junction with a groove disposed the other surface of the cathode layer to narrow the channel.

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