Semiconductor deposition method and device

Details Semiconductor deposition method and device Semiconductor deposition method and device

H - Electricity

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H01L 21/20 (2006.01) C30B 23/02 (2006.01) C30B 29/40 (2006.01) H01L 21/203 (2006.01) H01L 29/04 (2006.01) H01L 29/20 (2006.01)

Patent

CA 1299068

UPI-UI-1951 SEMICONDUCTOR DEPOSITION METHOD AND DEVICE ABSTRACT OF THE DISCLOSURE A method is disclosed of epitaxially depositing a semiconductor material on a substrate of different material while accommodating lattice mismatch in a manner that results in improved epitaxially deposited material. In a disclosed embodiment GaAs is epitaxially deposited by molecular beam epitaxy on a silicon substrate having a {100} crystallographic surface tilted in the <001> direction. Improved semiconductor devices, made using the disclosed technique, are also set forth.

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