Semiconductor device

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H - Electricity

01

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356/149

H01L 29/06 (2006.01) H01L 21/74 (2006.01) H01L 29/08 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1155971

PHN 9703 17 ABSTRACT: A semiconductor device having a semiconductor layer of a first conductivity type which is situated on a substrate region of the second opposite type. Present within an island-shaped region of the layer are a surface- adjoining active zone of the second conductivity type, for example the base zone of a bipolar transistor or the chan- nel region of a field effect transistor, and a juxtaposed highly doped contact zone of the first conductivity type. The thickness and the doping concentration of the layer are so small that the layer is depleted up to the surface at a reverse voltage across the p-n junction of the layer and the substrate region which is lower than the breakdown voltage. According to the invention, a highly doped buried layer is present between the layer and the sub- strate region and extends at least below at a least a por- tion of the active zone, the shortest distance between the edge of the buried layer and the edge of the contact zones being at least equal to Image where VB is the breakdown voltage of the p-n junction, and Ec is the critical field strength above which avalanche multiplication occurs. As a result of this the effect of lateral current concentrations (Kirk effect) is avoided, while a high breakdown voltage is maintained.

367727

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