Semiconductor device

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H - Electricity

01

L

356/185

H01L 29/267 (2006.01) H01L 27/06 (2006.01) H01L 29/36 (2006.01) H01L 29/51 (2006.01) H01L 29/778 (2006.01) H01L 29/80 (2006.01)

Patent

CA 1179071

- 1 - Abstract of the Disclosure A semiconductor device has a first semiconductor layer that contains substantially no impurity and a second semi- conductor layer that has a band gap greater than that of the first semiconductor layer and contains an impurity. An interface between these layers forms a heterojunction. At least one pair of electrodes are electronically connected with the first semiconductor layer, and the arrangement controls carriers developing at the heterojunction interface. The invention is characterized in that the first semi- conductor layer is a Ge layer, while the second semiconductor layer is a group III - V compound semiconductor layer. The result is a product with improved hole mobility.

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