H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/162
H01L 29/04 (2006.01) H01L 21/203 (2006.01) H01L 27/12 (2006.01) H01L 29/78 (2006.01) H01L 29/786 (2006.01)
Patent
CA 1170787
- 1 - Abstract: A polycrystalline semiconductor film is formed on an amorphous or polycrystalline substrate. The material of the film has a crystal system belonging to the diamond structure. This structure has at least one orientation of the <100> preferred orientation and the <110> preferred orientation. A semiconductor device is constructed by employing this polycrystalline semiconductor film as its material. A large-area or elongate semiconductor device can thus be made, the characteristics of which are enhanced. The film is formed by vacuum evaporation under a high vacuum less than 1 x 10-8 Torr.
381019
Katayama Yoshifumi
Kobayashi Keisuke
Maruyama Eiichi
Matsui Makoto
Shiraki Yasuhiro
Hitachi Ltd.
Kirby Eades Gale Baker
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