Semiconductor device

Details Semiconductor device Semiconductor device

G - Physics

11

C

356/180, 352/82

G11C 11/40 (2006.01) H01L 23/532 (2006.01) H01L 27/06 (2006.01) H01L 27/12 (2006.01)

Patent

CA 1179788

Abstract of the Disclosure A semiconductor device includes p- and n-type regions formed on an insulating substrate, and an interconnection layer electrically coupled with these p- and n-type regions. The interconnection layer is an n-type polycrystalline silicon layer which is electrically coupled with the p- and n-type regions through a metal silicide film formed between the interconnection layer and the p- and n-type regions.

381767

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