Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

L

356/136

H01L 23/48 (2006.01) H01L 23/29 (2006.01) H01L 23/31 (2006.01) H01L 23/52 (2006.01) H01L 23/532 (2006.01) H01L 29/49 (2006.01)

Patent

CA 1204222

- 1 - Abstract: A semiconductor device has an electrode or inter- connection made of an insulating film, a tungsten film and a phosphosilicate glass film which are stacked and formed on a semiconductor substrate. In this manner the channeling attributed to the punch-through of ions during ion implantation, and fluctuations in threshold voltage can be effectively prevented and the device given stable characteristics.

438426

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