H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/149
H01L 29/76 (2006.01) H01L 27/06 (2006.01) H01L 29/10 (2006.01) H01L 29/778 (2006.01)
Patent
CA 1208807
- 1 - Abstract: A semiconductor device has at least a first semi- conductor layer and a second semiconductor layer arranged to form a heterojunction. An edge of a conduction band of the first layer is positioned lower in energy than an edge of a conduction band of the second layer in the vicinity of the heterojunction. At least one pair of electrodes electronically connected to the first semiconductor layer are provided, together with a mechanism for controlling carriers induced in the vicinity of the heterojunction. The device is characterized in that a low impurity concentration region is provided in at least the part of the first layer between the pair of electrodes. Also a region adjoining each of the pair of electrodes is a high impurity concentration region. And finally at least one layer containing an impurity having a conductivity type identical to or opposite to that of an impurity contained in the aforementioned regions is provided in the first semiconductor layer. The result is a device that is superior in simplicity of fabrication and in character- istics, especially in providing high electron mobility while avoiding difficulties usually experienced with high speed devices.
454153
Katayama Yoshifumi
Maruyama Eiichi
Murayama Yoshimasa
Sawada Yasushi
Shiraki Yasuhiro
Hitachi Ltd.
Kirby Eades Gale Baker
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