Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

L

356/149

H01L 29/12 (2006.01) H01L 29/43 (2006.01) H01L 29/778 (2006.01)

Patent

CA 1238122

ABSTRACT OF THE DISCLOSURE A semiconductor device according to the invention comprises: a GaAs substrate; a GaAs layer of a low impurity concentration formed on the GaAs substrate; an AlGaAs layer of a low impurity concentration formed on the GaAs layer; a gate electrode of silicon or a compound of silicon and a metal formed on the AlGaAs layer; and a source electrode and a drain electrode formed on the AlGaAs layer. With this structure, a high electron mobility transistor in which a threshold voltage Vth is substantially 0 can be obtained.

497744

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