Semiconductor device

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H - Electricity

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356/146

H01L 29/08 (2006.01) H01L 21/033 (2006.01) H01L 21/331 (2006.01) H01L 27/08 (2006.01) H01L 29/423 (2006.01) H01L 29/72 (2006.01) H01L 29/732 (2006.01) H01L 29/735 (2006.01)

Patent

CA 1195435

- 1 - Abstract: A semiconductor device comprises a transistor having active regions formed in an opening provided in an insulating film. Electrodes are led out by a poly- crystalline silicon film formed on the insulating film, and the upper surfaces of the emitter and base electrodes and the exposed surface of the insulating film are substantially even. The device has high switching speed, while avoiding the comparatively large surface steps shown by the prior art which have tended to result in breakage.

414292

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