Semiconductor device

H - Electricity – 01 – L

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

356/149, 345/23

H01L 31/04 (2006.01) H01L 21/205 (2006.01) H01L 29/04 (2006.01) H01L 29/167 (2006.01) H01L 29/786 (2006.01) H01L 31/0368 (2006.01)

Patent

CA 1189940

ABSTRACT OF THE DISCLOSURE A semiconductor device includes a polycrystal- line semiconductor film body having at least one element selected from a group consisting of hydrogen, fluorine, chlorine, bromine, iodine, lithium, sodium, potassium, rubidium and cesium included mainly around grain bound- aries of the polycrystalline semiconductor film. The simultaneous inclusion of one of halogen elements and one of hydrogen and monovalent metal elements, of the group described above is more effective to quench charges of the elements included. The content of the elements included is 100 ppm to 40% by atom ratio. As a result, an electronic characteristic of the polycrystal- line semiconductor film is substantially improved.

399652

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1236131

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.