H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/149, 345/23
H01L 31/04 (2006.01) H01L 21/205 (2006.01) H01L 29/04 (2006.01) H01L 29/167 (2006.01) H01L 29/786 (2006.01) H01L 31/0368 (2006.01)
Patent
CA 1189940
ABSTRACT OF THE DISCLOSURE A semiconductor device includes a polycrystal- line semiconductor film body having at least one element selected from a group consisting of hydrogen, fluorine, chlorine, bromine, iodine, lithium, sodium, potassium, rubidium and cesium included mainly around grain bound- aries of the polycrystalline semiconductor film. The simultaneous inclusion of one of halogen elements and one of hydrogen and monovalent metal elements, of the group described above is more effective to quench charges of the elements included. The content of the elements included is 100 ppm to 40% by atom ratio. As a result, an electronic characteristic of the polycrystal- line semiconductor film is substantially improved.
399652
Katayama Yoshifumi
Maruyama Eiichi
Shimada Toshikazu
Gowling Lafleur Henderson Llp
Hitachi Ltd.
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