Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

L

356/141, 356/30

H01L 27/04 (2006.01) H01L 21/331 (2006.01) H01L 21/8222 (2006.01) H01L 29/72 (2006.01) H01L 29/732 (2006.01)

Patent

CA 1202430

- 1 - Abstract: A semiconductor device comprises a semiconductor substrate of a first conductivity type, a semiconductor region formed on the substrate, and a first insulation film provided between the semiconductor region and the substrate. The substrate is isolated by the insulation film from a polycrystalline silicon layer formed in the periphery of the semiconductor region whereby to reduce the parasitic capacitance. The insulation film is stretched and arranged on the lower side of the semi- conductor region. The result is a device with reduced base resistance and parasitic capacitance.

448434

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