Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

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356/149, 356/27

H01L 27/08 (2006.01) G05F 3/24 (2006.01) H01L 27/088 (2006.01) H01L 29/10 (2006.01) H01L 29/20 (2006.01) H01L 29/768 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1216967

ABSTRACT: Semiconductor device. 13 The invention relates to an integrated MOS circuit comprising a MOS transistor which is connected as a resistor and which, when current is passed, generates a voltage which is supplied to the source/gate of a second field effect device. In order to obtain a suitable current adjustment, the two channel widths are chosen so that due to narrow channel effects a difference (though small) in threshold voltage is obtained. The invention is of particular interest for CCD input circuits for generating a small offset voltage required for supplying FAT-zero.

459764

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