Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

L

356/162

H01L 29/72 (2006.01) H01L 23/485 (2006.01) H01L 23/522 (2006.01)

Patent

CA 1205577

- 1 - Abstract: A semiconductor device has an insulating film provided in regions other than a mesa region of a substrate having the mesa region. A polycrystalline silicon layer and a metal silicide layer are formed over the insulating film, and a take-out portion for at least one of the emitter, base, and collector members of a bipolar transistor provided in the mesa region is constituted by a film of this multi-layer structure. The result is a device having a higher switching speed than prior devices, due to a reduction in resistivity.

433567

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