Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

L

356/74

H01L 27/04 (2006.01) H01L 27/148 (2006.01) H01L 29/768 (2006.01)

Patent

CA 1214573

21 ABSTRACT: "Semiconductor device." The invention discloses a compact construction of an n-channel surface MOS source follower in a p-pocket in an n-type substrate. The source is connected to the p-pocket in order to avoid feedback. The drain is con- nected to the substrate which acts as a supply line. This construction permits manufacturing several output ampli- fiers with a minimum pitch. The invention is of particular importance for CCD sensors.

453390

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