Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

L

356/31

H01L 29/06 (2006.01) H01L 27/06 (2006.01) H01L 27/07 (2006.01) H01L 29/732 (2006.01)

Patent

CA 1173568

PHN 9877 10 ABSTRACT: A semiconductor device, comprising a semi- conductor body with a bipolar transistor with a collector zone which is formed by a part of a semiconductor region a base zone and an emitter zone which is embedded in the base zone. The base zone is connected to a base metalliz- ation and the emitter zone is connected to a an emitter metallization which comprises an emitter connected elec- trode. Between the emitter and the collector of the transistor there is connected a diode with a first zone which forms part of the semiconductor region and a second zone which is completely surrounded by the first zone and in projection is completely situated within the emitter connection electrode. This emitter connection electrode is connected to the second zone of the diode.

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