Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

L

356/134

H01L 27/04 (2006.01) H01L 23/492 (2006.01) H01L 23/522 (2006.01)

Patent

CA 1224279

13 ABSTRACT: Two (polycrystalline) silicon tracks (7, 8) located at a relative distance of the order of submicrons which contact the subjacent semiconductor body (1) with a pn junction formed therein, are connected to each other via a metal silicide track (21). The resulting short- circuiting of the pn junction does not influence the operation of the circuit, for example, a memory cell, realized in the semiconductor body. By providing before- hand the whole conductor pattern with an oxide layer (10) in which a contact hole (39) is formed at the area of the shortcircuit where the metal silicide track is to be pro- vided, the shortcircuit can be obtained in a self- aligning manner.

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