Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

L

356/172, 356/178

H01L 23/48 (2006.01) H01L 21/203 (2006.01) H01L 21/335 (2006.01)

Patent

CA 1189983

- 1 - Abstract: In making a semiconductor device a material having metallic conduction (hereinafter referred to as a "metallic material") is heteroepitaxially grown in luminar form on an insulating substrate by molecular beam epitaxy. The resulting metallic material layer is shaped into a desired pattern, as necessary. A semiconductor layer is heteroepitaxially grown on the metallic material layer and the semiconductor device is fabricated using the semiconductor layer. The metallic material layer is used as one of the electrodes of the device.

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