Semiconductor device

H - Electricity – 01 – L

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

356/172, 356/178

H01L 23/48 (2006.01) H01L 21/203 (2006.01) H01L 21/335 (2006.01)

Patent

CA 1189983

- 1 - Abstract: In making a semiconductor device a material having metallic conduction (hereinafter referred to as a "metallic material") is heteroepitaxially grown in luminar form on an insulating substrate by molecular beam epitaxy. The resulting metallic material layer is shaped into a desired pattern, as necessary. A semiconductor layer is heteroepitaxially grown on the metallic material layer and the semiconductor device is fabricated using the semiconductor layer. The metallic material layer is used as one of the electrodes of the device.

416462

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1287201

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.