Semiconductor device

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H - Electricity

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356/126, 356/149

H01L 29/76 (2006.01) H01L 27/06 (2006.01) H01L 29/10 (2006.01) H01L 29/778 (2006.01) H01L 29/80 (2006.01)

Patent

CA 1208808

- 1 - Abstract: A semiconductor device has a first semiconductor layer and a second semiconductor layer smaller in forbidden band gap than the first layer. These layers are arranged to form a heterojunction. There is a first electrode for controlling carriers generated at least in the vicinity of the heterojunction interface, and at least two further electrodes. The second layer is located between the first layer and the first electrode for controlling the carriers. Both the first and second layers contain an impurity at a concentration of at most 1015cm-3, and an impurity identical in conductivity type to the carriers is contained at a concentration of at least 1016cm-3 in regions located between the further electrodes and a region where the carriers are generated, so as to electrically connect the further electrodes and the carriers generated in the vicinity of the heterojunction interface under the first electrode for controlling the carriers. Elements of both the enhancement and depletion modes can thus be readily separately fabricated in the same integrated circuit. The structure also simplifies manufacture.

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