Semiconductor device

H - Electricity – 03 – K

Patent

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328/139

H03K 19/094 (2006.01) H03K 19/017 (2006.01) H03K 19/0952 (2006.01)

Patent

CA 1260561

ABSTRACT OF THE DISCLOSURE A semiconductor circuit device comprises a first MESFET having its drain connected to a first potential through a load, its gate receiving an input signal and its source connected to a second potential; a second MESFET having its drain connected to the first potential, its gate connected to the drain of the first MESFET; a third MESFET having its drain connected to the source of the second MESFET, both its gate and source connected to a third potential; and a Schottky barrier diode having its cathode connected to the gate of the second MESFET, and its anode connected to the junction of the second and third MESFETS.

515705

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