Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

L

356/162

H01L 23/48 (2006.01) H01L 21/285 (2006.01) H01L 23/52 (2006.01) H01L 23/528 (2006.01) H01L 23/532 (2006.01)

Patent

CA 1220561

-1- Abstract: A semiconductor device avoids defects caused by recrystallization in prior art devices. The surface of an insulator on which a material is to be recrystallized is flattened. A semiconductor layer employed for another use, for example as an interconnection between elements or as the gate electrode of a MOS transistor is disposed in the insulator. By virtue of the flattened insulator, the occurrence of crystal defects during recrystallization of the material is prevented.

460557

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