Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

L

356/126, 356/149

H01L 29/80 (2006.01) H01L 27/06 (2006.01) H01L 29/778 (2006.01)

Patent

CA 1195436

Abstract: A semiconductor device consists of a heterojunction formed by a first semiconductor layer and a second semi- conductor layer where the forbidden band gap of the first layer is smaller than that of the second layer. A pair of electrode regions is connected electronically to the first layer and the carrier density in the first layer is controlled. Impurities are not effectively included in the region in the first layer under the control of the carriers but are included in the region adjacent to the pair of electrodes. The density of the impurities in this region is preferably larger than 1016 cm-3. The result is a semiconductor device with enhanced carrier mobility and the ability to form, by a simple procedure, an integrated device containing both enhancement and depletion mode transistors.

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