Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

L

H01L 29/73 (2006.01) H01L 21/04 (2006.01) H01L 21/20 (2006.01) H01L 29/267 (2006.01) H01L 29/737 (2006.01) H01L 29/163 (1990.01)

Patent

CA 2092215

ABSTRACT OF THE DISCLOSURE This transistor is a pnp transistor having a heterojunction of p-type diamond (or BPXN1-X, 6HSiC) and n-type SiC (3CSiC)and having a structure in which a p+-SiC (3CSiC) layer, a p-SiC (3CSiC)layer, an n+-SiC (3CSiC) layer, a p-diamond (or BPXN1-X, 6HSiC) layer, and a p+-diamond (or BPXN1-X, 6HSiC) layer are formed on a substrate, and a collector electrode, a base electrode, and an emitter electrode are formed on and electrically connected to the p+-Sic layer, the n+-SiC layer, and the layer, respectively. This semiconductor device has a high resistance to environment.

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