Semiconductor device

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H - Electricity

01

L

H01L 29/40 (2006.01) H01C 17/00 (2006.01) H01L 21/283 (2006.01) H01L 23/482 (2006.01) H01L 23/532 (2006.01) H01L 23/64 (2006.01) H01L 29/45 (2006.01) H01L 29/46 (1990.01)

Patent

CA 2090789

ABSTRACT OF THE DISCLOSURE A semiconductor device having a high productivity, a low resistance ohmic electrode, a high integration density, a low deterioration of a characteristic of each component and a high yield is provided. The ohmic contact of the semiconductor device has a structure of an AuGe/Ni alloy layer (27), a WSi layer (18c) and an Au layer (17d) sequentially laminated on a GaAs substrate (1). The flatness of the electrode is maintained by the WSi layer (18c) and the reduction of a resistance of the electrode is attained by the Au layer (17d).

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