Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

L

H01L 27/06 (2006.01) H01L 27/085 (2006.01)

Patent

CA 2209699

The present invention provides a semiconductor device that is able to have the same Vp in all FETs formed on one chip. A semiconductor device of the present invention comprises a semiconductor substrate having a first region and a second region on a main surface. A first field effect transistor is formed on the first region of the main surface. This first field effect transistor has first gates arranged in rows and a first total gate width. The first gates respectively establish a first gate length and a first gate width. A second field effect transistor is formed on the second region of the main surface. This second field effect transistor has second gates arranged in rows and has a second total gate width smaller than the first total gate width. The second gates respectively establish a second gate length substantially the same as the first gate length and a second gate width substantially the same as the first gate width.

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