H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/60 (2006.01) H01L 23/12 (2006.01) H01L 23/29 (2006.01) H01L 23/31 (2006.01)
Patent
CA 2595518
A semiconductor device (100) is provided with a BGA substrate (110), a semiconductor chip (101), bumps (106) and an underfill (108) applied around the bumps (106). An interlayer insulating film (104) of the semiconductor chip (101) is composed of a low dielectric constant film. The bumps (106) are composed of a lead-free solder. The underfill (108) is composed of a resin material having an elastic modulus of 150MPa or more but not more than 800MPa, and a linear expansion coefficient of the BGA substrate (110) in a substrate planar direction is less than 14ppm/~C.
La présente invention concerne un dispositif à semi-conducteur (100) qui comprend un substrat BGA (110), une puce à semi-conducteur (101), des bosses (106) et un remplissage (108) appliqué autour des bosses (106). Un film d'isolation intercouche (104) de la puce à semi-conducteur (101) consiste en un film à faible constante diélectrique. Les bosses (106) consistent en un alliage de brasage sans plomb. Le remplissage (108) consiste en une résine ayant un module élastique compris entre 150 MPa et 800 MPa et le coefficient de dilatation thermique linéaire du substrat BGA (110) dans une direction plane du substrat est inférieur à 14 ppm/°C.
Hosomi Takeshi
Sakamoto Yushi
Sugino Mitsuo
Smart & Biggar
Sumitomo Bakelite Co. Ltd.
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