Semiconductor device

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H01L 29/06 (2006.01) H01L 21/336 (2006.01) H01L 29/10 (2006.01) H01L 29/205 (2006.01) H01L 29/73 (2006.01) H01L 29/737 (2006.01) H01L 29/861 (2006.01) H01L 29/784 (1990.01)

Patent

CA 2098919

A semiconductor device in the form of a metal insulator field effect transistor (MISFET) (200) is constructed as a heteros- tructure of narrow bandgap In1-x Al x Sb semiconductor materials. The MISFET (200) is formed from four semiconducting layers (112 to 118) arranged in series as follows: a heavily doped p-type first layer (112), a heavily doped relatively wider bandgap p-type second layer (114), a lightly doped p-type third layer (116) and a heavily doped n-type fourth layer (118). A source (202) and a drain (204) are formed in the fourth layer (118) and a gate (116/205) in the third layer. An n+p- junction (124) is formed between the third and fourth layers and a p+p- junction (122) between the second and third layers. The sec- ond layer (114) provides a conduction band potential energy barrier to minority carrier (electron) flow to the gate (116/205), and is sufficiently wide to prevent tunnelling of minority carriers therebetween. The first and second layers (112, 114) in combination provide a p+p+ excluding contact to the third layer (116). The n+p- junction (124) between the third and fourth layers (116, 118) is an extracting contact; when reverse biased in operation, this junction (124) extracts minority carri- ers from the region of the third layer (116) adjacent the collector (118/204). In operation, the third layer (116) incorporating the gate (205) becomes depleted of charge earners and therefore exhibits greatly reduced leakage current. In consequence, the MISFET (200) has good dynamic range in terms of controllable drain current. The invention also provides bipolar tran- sistors (300, 400) and related devices.

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