G - Physics – 02 – B
Patent
G - Physics
02
B
G02B 6/42 (2006.01) G02B 6/122 (2006.01) G02B 6/30 (2006.01) H01S 5/10 (2006.01) H01S 5/20 (2006.01) H01L 33/00 (2006.01)
Patent
CA 2182591
A semiconductor optical device, for example a laser, has a composite optical waveguide comprising a tapered, MQW active waveguide (1), in optical contact with a substantially planar, passive waveguide (2). The fundamental optical mode supported by the composite waveguide varies along the length of the composite waveguide so that, in a laser, the laser mode is enlarged and is a better match to single mode optical fibre. A method for making such semiconductor optical devices is also disclosed.
Ce dispositif optique à semi-conducteur, par exemple un laser, présente un guide d'ondes optiques composite comprenant un guide d'ondes (1) actif effilé à puits multiquantique, en contact optique avec un guide d'ondes passif (2) sensiblement plan. Le mode optique fondamental supporté par le guide d'ondes composite varie sur toute la longueur de celui-ci de telle manière que, dans un laser, le mode de laser est agrandi et constitue un meilleure adaptation à la fibre optique à mode simple. L'invention concerne également un procédé de fabrication de tels dispositifs optiques à semi-conducteur.
Lealman Ian Francis
Robertson Michael James
Gowling Lafleur Henderson Llp
Ipg Photonics Corporation
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